The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 04, 2000

Filed:

Dec. 31, 1997
Applicant:
Inventors:

M Lawrence Dass, Fremont, CA (US);

Krishna Seshan, San Jose, CA (US);

Isaura Gaeta, Sunnyvale, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438624 ; 438786 ; 438958 ;
Abstract

An integrated circuit passivation layer including a first passivation layer portion of silicon nitride treated with nitrous oxide and a second passivation layer portion of polyimide. Also, a method of passivating an integrated circuit wafer including depositing a first passivation layer over the top surface of an integrated circuit wafer having a scribe street area between adjacent integrated circuit device portions, depositing a second passivation layer over the first passivation layer, and patterning the first passivation layer and the second passivation layer to expose the scribe street area.


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