The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Jan. 28, 1997
Applicant:
Inventors:
Joe Ko, Hsinchu, TW;
Chung-Yuan Lee, Chung-Li, TW;
Assignee:
United Microelectronics Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438223 ; 438224 ; 438237 ; 438430 ;
Abstract
A MOSFET integrated circuit device comprises a lightly doping a semiconductor substrate, with wells formed within the substrate doped with an opposite value dopant, forming a plurality of doped regions within the surface of the substrate and within the surface of the wells, the improvement comprising opening a trench about the periphery of the wells, and filling the trench with a relatively highly conductive material as a guard structure.