The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 04, 2000
Filed:
Jun. 12, 1998
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
A half tone phase shift mask material, suitable for use at 193 nm is disclosed. It comprises a layer of nitrogen rich silicon nitride that was formed by subjecting a mixture of a nitrogen bearing gas, such as nitrogen and/or ammonia, with a silicon bearing gas, such as silane, to a plasma discharge. Provided the ratio of the nitrogen bearing to the silicon bearing gases is about 10 to 1, films having the required optical properties at 193 nm are formed. These properties are a reflectance that is less than 15% and a transmittance that is between 4 and 15%. Related optical properties, namely an extinction coefficient of about 0.4 and a refractive index of about 2.5, are also closely approached. Additionally, the films are stable under prolonged UV exposure and exhibit good etch behavior.