The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2000
Filed:
Sep. 02, 1997
Applicant:
Inventor:
Fumiki Aiso, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438486 ; 438482 ; 438507 ; 438508 ; 438509 ; 438565 ;
Abstract
In a silicon conductor doped with an impurity of 100 nm or less thick, a method is provided for manufacturing a silicon thin film conductive element which can prevent the increase of resistance with a low impurity concentration. The method includes the step in which, after the formation of an impurity-containing amorphous silicon film, a crystallization is performed without removing the film from a film forming device by performing a heat treatment while flowing a gas containing the impurity.