The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2000
Filed:
Feb. 02, 1999
Applicant:
Inventors:
Chen-Chung Hsu, Hsinchu Hsien, TW;
Yih-Jau Chang, Hsinchu, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438301 ; 438200 ; 438210 ; 438275 ; 438592 ; 438595 ;
Abstract
An improved method for fabricating an ESD protection device so as to avoid ESD damage to a wafer. The improved method includes simultaneously forming an internal circuit and the ESD protection device without additional photomask or other process. The improved method uses a P.sup.+ doped region to take the place of an N.sup.- doped region of an interchangeable source/drain region with a LDD structure for the ESD protection device, of which its trigger voltage is adjusted by simply varying the P.sup.+ concentration.