The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2000
Filed:
Jan. 20, 1998
Applicant:
Inventors:
Anthony J Canale, Essex Junction, VT (US);
John E Cronin, Milton, VT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438243 ; 438246 ;
Abstract
A method for forming a semiconductor trench capacitor cell having a buried strap uses a substrate having a trench with a conductor separated from walls of the trench by a dielectric material. A portion of the dielectric material to a level below a top surface of the conductor is removed and at least a portion of the space thus formed is filled with a diffusible material. The buried strap is formed by annealing the conductor, the wall and the diffusible material so that conductive elements from the wall and the conductor diffuse into the diffusible material.