The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2000
Filed:
Nov. 09, 1998
Applicant:
Inventors:
Ching-Fa Yeh, Hsinchu, TW;
Jeng-Shu Liu, Hsinchu, TW;
Assignee:
Other;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D / ;
U.S. Cl.
CPC ...
205106 ; 205108 ; 205124 ; 205157 ; 205220 ; 205229 ;
Abstract
The present invention relates to a method for forming a polyoxide film on a doped polysilicon layer, which is suitable for use as an inter-polysilicon polyoxide film between a doped polysilicon floating gate and a doped polysilicon control gate. The method includes conducting an electrolytic reaction at a room, temperature such that a polyoxide layer is formed on a doped polysilicon layer acting as an anode. The polyoxide layer is preferably further subjected with a rapid thermal processing to improve its electrical characteristics.