The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 14, 2000

Filed:

Feb. 17, 1998
Applicant:
Inventors:

John H Hall, San Jose, CA (US);

J Kirkwood Rough, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
257263 ;
Abstract

An integrated transistor device operates with a linear triode vacuum tube like characteristic with a very low output impedance and a large interaction between the gate and drain potentials. The drain current of a first transistor is connected directly to the source of a second transistor which has a low input impedance matching the output impedance of the first transistor. The gate of the second transistor is held at a positive potential and functions to provide isolation of the varying drain signal from the drain of the first transistor and to provide a high impedance at the output terminal. This device structure provides high input impedance, high current gain, high output impedance and a linear operating characteristic.


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