The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Jan. 09, 1998
Michihiko Takase, Urayasu, JP;
Bunji Mizuno, Ikoma, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
An ion implantation apparatus has a wafer processing chamber which executes ion implantation on plural product wafers 2 while integrally revolving the product wafers 2 at a high speed in a locus passing through an irradiation range of ion beams 1. A wafer wheel 5 having plural wafer holders 4 which radially elongate from a rotating shaft 3 and which respectively hold the product wafers 2 is provided with an electrically conductive body 6 (7, 8) which is grounded and which passes through the irradiation range of the ion beams 1. Further, a method is provided in which ion implantation can be conduced without causing a charge-up, in a production step of a MOS semiconductor device of the extension structure. The source and drain regions of a MOS semiconductor of the extension structure are formed by using the ion implantation apparatus.