The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
Jul. 16, 1998
Sung-kyeong Kim, Kyungki-do, KR;
Hun Cha, Kyungki-do, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
There is provided a method of etching metallic film for a semiconductor device, in which a semiconductor substrate with a metallic film exposed in a film pattern is inserted onto a chuck in a chamber of an electrostatic shielded radio frequency (ESRF) inductive-coupled plasma source, the ESRF inductive-coupled plasma source also including a coil connected to an upper electrode, a lower electrode connected to the chuck, a gas supply assembly, a pressure control assembly and a temperature control assembly. An etching gas is supplied to the chamber at a predetermined etch gas supply rate. Pressure inside the chamber is maintained at a predetermined pressure level. The upper and lower electrodes are powered with predetermined upper and lower powers, respectively, at predetermined upper and lower RFs, respectively. The chamber walls are cooled to a predetermined temperature. The metallic film is etched such that trenches in the metallic film are formed with predetermined trench qualities including a predetermined trench critical dimension no greater than a critical dimension associated with large scale integration.