The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2000
Filed:
May. 05, 1997
Applicant:
Inventors:
Assignee:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
438253 ; 438586 ; 438595 ;
Abstract
A method of fabricating contact holes in high density integrated circuits uses landing plugs to reduce the aspect ratio of the the node contact holes in order to improve the processing window of deep contact holes. Along with nitride spacers on the sidewalls of a transistor gate structure, polysilicon hard masks and polysilicon spacers are used as etching masks in a self-aligned contact process. In addition, the landing plugs incorporate the polysilicon spacers as part of landing plug to increase the contact area. As a result, wide contact processing windows can be achieved in high density integrated circuits.