Charged-particle-beam microlithography methods including correction of

Abstract

Charged-particle-beam (CPB) exposure methods are disclosed that resolve the problem of aberrations produced by an image-adjustment lens and the problem of limitations in the speeds in which stage-correction mechanisms can be adjusted. Adjustments of stage-correction mechanisms and image-adjustment lenses are optimized in any of various combinations depending upon exposure conditions, pattern configuration, etc. Image rotation and defocusing in CPB microlithography can be corrected by moving the reticle stage and substrate stage using respective stage-control and correction devices. Alternatively or in addition, adjustments can be made by controllably adjusting a deflector and/or an image-adjustment lens. Whenever corrections are required over a wide correction range and a relatively slow correction speed is acceptable, corrections can be made using a stage-correction mechanism. Other corrections can be made as required using the image-adjustment lens which offers substantially greater speed but a narrower correction range.