The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 15, 2000
Filed:
Aug. 12, 1997
Applicant:
Inventors:
Dong-Sing Wuu, Hsinchu, TW;
Ten-Hsing Jaw, Hsinchu, TW;
Assignee:
Industrial Technology Research Institute, Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L / ; G01L / ; H01L / ;
U.S. Cl.
CPC ...
438 53 ; 438700 ;
Abstract
Deep groove structure for semiconductors comprising a semiconductor substrate, a groove or a cavity formed in said semiconductor substrate and a suspending glass membrane formed on the groove or deep cavity, prepared by a flame hydrolysis deposition process. The suspending glass membrane functions as a planarization structure and has surface at the same level of the surface of the semiconductor substrate. The present invention also discloses a method to prepare the deep groove structure.
Quick Actions:
Wuu, Dong-Sing. (2000). Deep groove structure for semiconductors (U.S. Patent No. 6025209). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6025209
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile