Plasma method for stripping ion implanted photoresist layers

Abstract

A method for stripping an ion implanted photoresist layer from a substrate. There is first provided a substrate. There is then formed over the substrate an ion implanted photoresist layer. There is then treated the ion implated photoresist layer with a first plasma employing a first etchant gas composition comprising a fluorine containing species to form a fluorine plasma treated ion implanted photoresist layer. Finally, there is then stripped from the substrate the fluorine plasma treated ion implanted photoresist layer with a second plasma employing a second etchant gas composition comprising an oxygen containing species without the fluorine containing species. The ion implanted photoresist layer is stripped from the substrate without plasma induced damage to the substrate. The method is particularly useful for stripping from semiconductor substrates ion implanted patterned photoresist layers employed in forming ion implant regions within those semiconductor substrates prior to thermally oxidizing those semiconductor substrates to form thermal silicon oxide layers upon those semiconductor substrates.