The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2000

Filed:

Aug. 31, 1998
Applicant:
Inventors:

Takashi Nakano, Tokyo, JP;

Nobuhiko Mutoh, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F / ;
U.S. Cl.
CPC ...
330277 ; 330307 ;
Abstract

In an on-chip source follower amplifier having at least one amplification circuit formed on a semiconductor substrate of a first conductivity type, the amplification circuit includes a driver transistor, a peripheral device, a first capacitance, and a high resistance. The driver transistor is formed in a first conductive region of a second conductivity type on the semiconductor substrate. The peripheral device is formed in a second conductive region of the second conductivity type on the semiconductor substrate. The second conductive region is isolated from the first conductive region. The first capacitance couples the first conductive region to a source of the driver transistor. The high resistance is connected between the first conductive region and a DC power supply.


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