The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2000
Filed:
Dec. 03, 1998
Yuh-Da Fan, Tao-Wu Country, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A composite shadow ring for use in an etch chamber that does not generate contaminating oxygen gas when bombarded by a gas plasma and a method for using such composite shadow ring are presented. The composite shadow ring may have a structure of a body portion of a ring shape that is made of a material that is substantially of silicon dioxide and an insert portion which is intimately joined to the body portion and is adjacent to a plasma cloud in the etch chamber when the shadow ring is positioned juxtaposed to the wafer, the insert portion of the shadow ring may also have a ring shape and is eccentric with the body portion, it generally has a diameter smaller than a diameter of the body portion, the insert portion may be fabricated of a material that does not generate oxygen when bombarded by a fluorine-containing gas plasma. The body portion may have a crosssection of a rectangle which has an upper inner corner of the rectangle missing to form a cavity for receiving an insert member intimately therein. The insert portion may further have a cross-section of a rectangle. The insert portion may be advantageously made of a material that is substantially silicon.