The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2000
Filed:
Dec. 23, 1997
Todd Gandy, Phoenix, AZ (US);
Ronald Sampson, Fountain Hills, AZ (US);
Robert Hodges, Phoenix, AZ (US);
STMicroelectronics, Inc., Carrollton, TX (US);
Abstract
A method of forming an isolation region in an integrated circuit and an integrated circuit formed thereby. A method preferably includes forming at least one trench in a semiconductor substrate, forming an insulation layer of material in the at least one trench and on peripheral regions of the at least one trench of the semiconductor substrate, forming a sacrificial layer of material on the insulation layer having a different polishing rate than the insulation layer, and polishing the layer having the different polishing rate and portions of the insulation layer so that the sacrificial layer having the different polishing rate and portions of the insulation layer are removed, so that other portions of the insulation layer remain in the at least one trench of the substrate, and so that the upper surface of the at least one trench and the peripheral regions thereof in combination provide a substantially planar surface.