The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2000
Filed:
Feb. 02, 1998
Katsuhiko Iwabuchi, Sagamihara, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In a vacuum processing apparatus for a semiconductor wafer, a first dielectric plate 4 is provided over an O-ring 32 on an upper surface of a main mounting stand unit 31, in which is embedded a coolant passageway 34, the upper surface thereof is configured as an electrostatic chuck, and a second dielectric plate 5 in which is embedded a heater 53 is provided thereon. Recesses and projections are machined into the surface of the first dielectric plate 4 so that crevices are formed between the resultant indentations 41 and the second dielectric plate 5. During the formation of an SiOF film, the heat from the heater 53 is not conducted through these crevices in a vacuum environment, so that the thermal conductivity between the second dielectric plate 5 and the first dielectric plate 4 is reduced and thus the temperature gradient therebetween is increased. Since the rear surface side of the first dielectric plate 4 is at no more than 200.degree. C., the O-ring is not subjected to a high temperature. This configuration suppresses deterioration of the O-ring, even during high-temperature processing, and also prevents breakdown of the insulating properties of an insulating film formed on a semiconductor wafer.