The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 08, 2000

Filed:

Jun. 17, 1996
Applicant:
Inventors:

Hiroyuki Shinozaki, Fujisawa, JP;

Yukio Fukunaga, Yokohama, JP;

Takeshi Murakami, Tokyo, JP;

Kiwamu Tsukamoto, Fujisawa, JP;

Assignee:

Ebara Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ; C23C / ;
U.S. Cl.
CPC ...
118715 ; 118725 ; 118730 ;
Abstract

A thin-film vapor deposition apparatus has a reaction chamber for holding therein a substrate in an atmosphere isolated from an ambient atmosphere. For depositing a thin film on the substrate, the temperature of an inner wall of the reaction chamber is adjusted to control the temperature of the atmosphere in the reaction chamber, and the temperature of the substrate is also adjusted independently of the temperature of the atmosphere in the reaction chamber, while the substrate is being rotated at a high speed in the reaction chamber. Reactant gases required to deposit a thin film on the substrate are ejected from a reactant gas elector head toward the substrate in the reaction chamber. Remaining and excessive gases are discharged out of the reaction chamber.


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