The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2000
Filed:
Sep. 18, 1998
Szetsen Steven Lee, Hsinchu, TW;
Windbond Electronics Corp., , US;
Abstract
A non-intrusive method for in-situ measurement of etching chamber and optionally etch rate inside a plasma etching chamber is disclosed for use in the fabrication of semiconductor devices. The method includes the step of selecting at least one plasma species as a probe which can be F, CF.sub.2, or CO, then measuring the emission intensity at a predetermined wavelength corresponding to the plasma species so selected. Preferably, the emission intensity is measured at wavelength of 686 nm (corresponding to the transition of F from 3s.sup.3 P.sub.3 to 3p.sup.4 P.sub.3), 269 or 239 nm, corresponding to the transitions from A.sup.1 B.sub.1 (v'=0) to X.sup.1 A.sub.1 (v'=0) and from A.sup.1 B.sub.1 (v'=9) to X.sup.1 A.sub.1 (v'=0) for CF.sub.2, respectively, and 693 or 505 nm, corresponding to the transitions from d.sup.3 .PI.(v'=2) to a.sup.3 .PI.(v'=2) and from d.sup.3 .PI.(v'=7) to a.sup.3 .PI.(v'=2) for CO, respectively. By properly selecting the measurement site, etching rate and etching pressure can be obtained simultaneously.