The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2000

Filed:

Nov. 04, 1997
Applicant:
Inventors:

Wenbin Jiang, Phoenix, AZ (US);

Rong-Ting Huang, Gilbert, AZ (US);

Michael S Lebby, Apache Junction, AZ (US);

Assignee:

Motorola, Inc., Schaumburg, IL (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01S / ;
U.S. Cl.
CPC ...
372 46 ; 372 96 ;
Abstract

A VCSEL for high power single mode operation and method of fabrication including a substrate element, a first stack of distributed Bragg reflectors disposed on a surface of the substrate element, an active region lattice matched to a surface of the first stack of distributed Bragg reflectors, and a second stack of distributed Bragg reflectors lattice matched to a surface of the active region. The VCSEL structure includes an isolation layer formed on the second stack of distributed Bragg reflectors. The isolation layer is formed of a dielectric material or insulating semiconductor material having an index of refraction greater than the first and second stacks of distributed Bragg reflectors and thereby defining an anti-guiding VCSEL structure. An electrical contact is coupled to a surface of the second stack of distributed Bragg reflectors and an electrical contact is positioned a surface of the substrate element.


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