The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 25, 2000
Filed:
Oct. 15, 1998
Constantin Papadas, Gieres, FR;
Jean-Pierre Schoellkopf, Grenoble, FR;
STMicroelectronics S.A., Saint Genis, FR;
Abstract
The present invention relates to the use of a conventional MOS transistor as a memory point in which, during programming, the well of the MOS transistor is connected to a reference potential, the drain and the source are connected to a current source adapted to bias the drain and source junctions in reverse and in avalanche so that the space charge region extends along the entire channel length, the gate is set to the reference potential if the memory point does not have to be programmed and to a distinct potential if the memory point has to be programmed; and during the reading, circuitry is provided to detect a high or low impedance state between the gate and the well.