The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 18, 2000
Filed:
Sep. 06, 1996
Applicant:
Inventors:
Jon Roderick Williamson, San Jose, CA (US);
Subhash R Nariani, San Jose, CA (US);
Assignee:
VLSI Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438253 ; 438396 ;
Abstract
Within a dual gate oxide process, gate oxide is formed within regions on a substrate. Gate material, such as polysilicon, is placed over a first region. The gate material extends over field oxide surrounding the first region. Gate oxide within a second region is stripped. The gate material over the first region prevents gate oxide within the first region from being stripped. A new layer of gate oxide is formed within the second region. A first transistor gate is formed within the second region. The gate material which is over the first region is etched to form a second transistor gate.