The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2000
Filed:
Dec. 19, 1997
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A semiconductor device is formed which includes a shallow PMOS active region containing a heavy atom p-type dopant material. In an exemplary process for making a PMOS device or portion of a device, at least one PMOS gate electrode is formed over a PMOS device region of a substrate. A PMOS spacer is formed on a sidewall of a PMOS gate electrode. An amorphizing dopant material is selectively implanted into a PMOS active region using the PMOS spacer as a mask. A heavy atom p-type dopant material is selectively implanted into the PMOS active region using the PMOS spacer as a mask. The order of implantation of the amorphizing dopant material and the heavy atom p-type dopant material may be reversed.