The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2000
Filed:
Aug. 06, 1997
Applicant:
Inventors:
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438626 ; 438631 ; 438632 ; 438634 ; 438637 ; 438645 ; 438646 ; 438937 ;
Abstract
A method for improving the planarization of a dielectric layer in the fabrication of metallic interconnects wherein a rapid thermal processing operation is used in order to consolidate exposed surfaces of a dielectric layer after local planarization of the dielectric layer. This method avoids damage to the dielectric layer caused during a pre-metal etching operation, and consequently, prevents residual tungsten from becoming lodged in fissures during subsequent tungsten deposition to produce stringers which may cause short circuiting on coming in contact with metal wiring.