The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 28, 1999
Filed:
Oct. 25, 1996
Suguru Tabara, Hamamatsu, JP;
Yamaha Corporation, , JP;
Abstract
A wafer having an interlayer insulating film on a silicon substrate and an Al alloy layer on the interlayer insulating film coated with a resist pattern is introduced into an etching chamber where the Al alloy layer is selectively etched in etchant gas plasma. A main etching process is performed under the etching conditions of a high plasma density until the interlayer insulating film 12 is exposed, and a succeeding over etching process is performed under the etching conditions of a low plasma density. A dry etching method and system is provided which can suppress generation of an abnormal shape or notch of a wiring pattern etched in low pressure and high density plasma, without sacrificing etching selectivity and with productivity being maintained high.