The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 1999

Filed:

Aug. 21, 1998
Applicant:
Inventors:

Kenichi Koyanagi, Tokyo, JP;

Kunihiro Fujii, Tokyo, JP;

Tatsuya Usami, Tokyo, JP;

Koji Kishimoto, Tokyo, JP;

Assignee:

NEC Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
257751 ; 257763 ; 257764 ; 257758 ; 257753 ; 257750 ;
Abstract

A semiconductor device comprising an insulating film at least partially containing a fluorine-containing film, formed above a semiconductor substrate, and a titanium nitride film formed on the insulating film. The above titanium film functions as a barrier metal film for barriering the diffusion of fluorine (F) atoms.


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