The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 1999

Filed:

Nov. 24, 1997
Applicant:
Inventors:

Michael A Todd, Danbury, CT (US);

Thomas H Baum, New Fairfield, CT (US);

Gautam Bhandari, Danbury, CT (US);

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C07F / ;
U.S. Cl.
CPC ...
556 70 ; 556 64 ; 556 71 ;
Abstract

An antimony/Lewis base adduct of the formula SbR.sub.3.L, wherein each R is independently selected from C.sub.1 -C.sub.8 alkyl, C.sub.1 -C.sub.8 perfluoroalkyl, C.sub.1 -C.sub.8 haloalkyl, C.sub.6 -C.sub.10 aryl, C.sub.6 -C.sub.10 perfluoroaryl, C.sub.6 -C.sub.10 haloaryl, C.sub.6 -C.sub.10 cycloalkyl, substituted C.sub.6 -C.sub.10 aryl and halo; and L is a Lewis base ligand coordinating with SbR.sub.3. The adducts of the invention are useful as metal source compositions for chemical vapor deposition, assisted chemical vapor deposition (e.g., laser-assisted chemical vapor deposition, light-assisted chemical vapor deposition, plasma-assisted chemical vapor deposition and ion-assisted chemical vapor deposition), ion implantation, molecular beam epitaxy, and rapid thermal processing, to form antimony or antimony-containing films.


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