The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Oct. 30, 1997
Applicant:
Inventors:
Assignee:
National Science Council, Taipei, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
438779 ; 438778 ; 438787 ; 438782 ;
Abstract
A method for growing a silicon dioxide film on a HgCdTe substrate includes a first step in which the HgCdTe substrate is cleaned with an alkaline aqueous solution. The cleaned HgCdTe substrate is then dried before being immersed in a liquid phase deposition solution in which the silicon dioxide film is deposited on the surface of the HgCdTe substrate at the rate as high as 1672 .ANG./hr. The silicon dioxide film has a refraction rate as high as 1.465.