The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Feb. 15, 1996
Applicant:
Inventor:
Susan C Abraham, San Jose, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438714 ; 438738 ; 438742 ; 438952 ; 216 72 ;
Abstract
A method for etching a TiN layer of a wafer stack in a plasma processing chamber. The method includes the step of etching at least partially through the TiN layer using a first chemistry, which preferably includes a TiN etchant, a noble gas, and a polymer-forming chemical. In one embodiment, the TiN etchant is Cl.sub.2, the noble gas is argon, and the polymer-forming chemical is CHF.sub.3.