The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Feb. 12, 1998
Michael E Thomas, Milpitas, CA (US);
Brian J Daniels, Eagan, MN (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
Sidewall spacers, adjacent a gate electrode and source/drain regions of a MOS transistor are formed of a dielectric material that can be etched selectively to the material selected as the isolation dielectric. A layer of silicide forming metal is deposited overlying the MOS transistor and heated, wherein silicide regions are formed where the metal makes contact with silicon, for example, in the gate electrode and source/drain regions. At least a portion of the sidewall spacers are etched-away and silicide stringers, if formed on the spacers, are removed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile