The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 21, 1999

Filed:

Aug. 30, 1996
Applicant:
Inventors:

Tadashi Ogawa, Miyazaki, JP;

Akihiro Ishii, Miyazaki-gun, JP;

Yuichi Nakayoshi, Kitamorokata-gun, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438406 ; 438404 ; 438455 ; 438457 ; 148D / ; 148D / ;
Abstract

An SOI substrate and a method for fabricating the same are provided to sharpen the departing angle at the circumference of the active substrate, and provide the active substrate with a uniform thickness. An attached wafer of the present invention is formed by processing the upper side of the base substrate so that its thickness increases from the center to the circumference, and attaching the active substrate to the processed side of the base substrate. The unattached portion of the attached wafer is removed. Then mirror processing is performed to provide the active substrate with a substantially uniform thickness along the processed side of the base substrate.


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