The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 1999
Filed:
Mar. 13, 1998
Chun-Hung Peng, Hsinchu, TW;
Holtek Microelectronics Inc., Hsinchu, TW;
Abstract
A method for manufacturing a metal-oxide-semico nductor field effect transistor (MOSFET) having a drain and a source each of which has a lightly doped area, an enhanced lightly doped area and a heavily doped area is disclosed. The method includes steps of lightly doping the silicon substrate having a gate structure to form the lightly doped areas of the source and the drain; forming a first non-conductive layer covering the silicon substrate and the gate, forming a second non-conductive layer covering the first non-conductive layer, forming a duple-sidewall including a side-wall-spacer of the first non-conductive layer and an inner spacer, heavily doping the silicon substrate to form the heavily doped areas of the source and the drain respectively, removing the side-wall-spacer of the first non-conductive layer, executing an anisotropic etching on the inner spacer to form a cascade-shaped spacer of the gate, and doping the silicon substrate to form the enhanced lightly doped area and thus forming the extension area of the heavily doped area.