The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 14, 1999
Filed:
Jun. 02, 1998
Yen-Lin Ding, Hsinchu, TW;
United Semiconductor Corp., Taipei, TW;
Abstract
A method of fabricating a capacitor on a bit line of a DRAM. A substrate having a gate, a bit line, a source/drain region and an insulating layer covering the gate and the bit line is provided. A first conductive layer and an oxide layer are formed successively on the insulating layer. The oxide layer and the first conductive layer are defined to form a contact hole to expose the source/drain region. An insulating spacer is formed on the sidewall of the contact hole, and the first conductive layer and the second conductive layer are defined so they may be used as a lower electrode. A dielectric layer is formed on the first conductive layer and the second conductive layer. A third conductive layer as an upper electrode of a capacitor is formed on the dielectric layer.