The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Oct. 22, 1997
Applicant:
Inventors:
Shing-Ren Sheu, Tao-Yuan, TW;
Chung-Yuan Lee, Chung-Li, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257327 ; 257314 ; 257315 ; 257336 ;
Abstract
An improved metal oxide field effect transistor (MOSFET) provides an electro-static protection device with a high resistance to electro-static discharge. The electro-static discharge protection device has pre-gate heavily doped regions adjacent to the source and drain regions, where the pre-gate regions extend at least partially under the gate electrode. A single heavily doped pre-gate region may be provided for the MOSFET of the electro-static discharge protection circuit.