The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Oct. 04, 1996
Men-Chee Chen, Dallas, TX (US);
Malcolm J Bevan, Garland, TX (US);
Raytheon Company, Lexington, MA (US);
Abstract
A room temperature emitter (10) operating in the 3-5 .mu.m wavelength range is provided. The emitter (10) includes a substrate (12) formed of a material selected from the group comprising cadmium telluride or cadmium zinc telluride. An epitaxial active layer (14) is formed over the substrate (12) from mercury cadmium telluride. The active layer (14) may be either a p-type or an n-type layer. The active layer (14) is doped with a predetermined concentration of dopant selected from the group comprising indium and arsenic. More particularly, if the active layer (14) is a p-type layer, it is doped with arsenic in a concentration between approximately 1.times.10.sup.16 atoms/cm.sup.3 and 1.times.10.sup.17 atoms/cm.sup.3. If the active layer (14) is an n-type layer, it is doped with indium in a concentration between approximately 5.times.10.sup.14 atoms/cm.sup.3 to 1.times.10.sup.15 atoms/cm.sup.3. A first epitaxial confinement layer (16) is formed from mercury cadmium telluride. The first confinement layer (16) is formed over the active layer (14). The first confinement layer (16) may be either an n.sup.+ layer or a p.sup.+ layer, depending upon whether the active layer (14) is a p-type or n-type layer. A metal layer (18) is formed over the first confinement layer (16).