The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Sep. 09, 1997
Applicant:
Inventors:
Bernhard Lustig, Munich, DE;
Herbert Schaefer, Hoehenkirchen-Sieg. Brunn, DE;
Martin Franosch, Munich, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 66 ; 257347 ;
Abstract
Semiconductor islands respectively comprise at least a Si.sub.1-x Ge.sub.x layer and a distorted silicon layer that exhibits essentially the same lattice constant as the Si.sub.1-x Ge.sub.x layer are formed on an insulating layer that is located on a carrier plate. The semiconductor islands are preferably formed by selective epitaxy and comprise p-channel MOS transistors and/or n-channel MOS transistors.