The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
May. 08, 1998
Applicant:
Inventors:
Charles P Beetz, Jr, New Milford, CT (US);
Robert W Boerstler, Woodbury, CT (US);
John Steinbeck, Fitzwilliam, NH (US);
David R Winn, Wilton, CT (US);
Assignee:
NanoSciences Corporation, Oxford, CT (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C25D / ; C25D / ; C25D / ; C25F / ;
U.S. Cl.
CPC ...
205124 ; 205219 ; 205221 ; 205223 ; 205656 ; 205665 ; 205674 ; 205675 ;
Abstract
An element with elongated, high aspect ratio channels such as microchannel plate is fabricated by electrochemical etching of a p-type silicon element in a electrolyte to form channels extending through the element. The electrolyte may be an aqueous electrolyte. For use as a microchannel plate, the; the silicon surfaces of the channels can be converted to insulating silicon dioxide, and a dynode material with a high electron emissivity can be deposited onto the insulating surfaces of the channels. New dynode materials are also disclosed.