The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Feb. 05, 1998
Applicant:
Inventor:
Sadaaki Masuoka, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257369 ; 257900 ;
Abstract
A CMOS device includes a first conductive type channel MOSFET having first side-wall spacers on side surfaces and having a source and drain region of an LDD structure, and a second conductive type channel MOSFET having second side-wall spacers on side surfaces and having a source and drain region of a single drain structure, wherein a width of the first side-wall spacers is larger than that of the second side-wall spacers, restraining the short channel effect and hot carrier effect as well.