The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1999
Filed:
Aug. 13, 1997
Applicant:
Inventors:
Shoichi Takamizawa, Nishishirakawa, JP;
Norihiro Kobayashi, Annaka, JP;
Assignee:
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29 2501 ; 438471 ; 438908 ; 257913 ;
Abstract
Two or more processes selected from heat treatment for anihilation of oxygen donors, formation of a gettering region, and formation of a dopant-volatilization-prevention film are simultaneously performed in a common apparatus in accordance with the specifications of silicon wafers to be manufactured. Therefore, productivity can be improved.