The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 16, 1999

Filed:

Oct. 23, 1997
Applicant:
Inventors:

William Edward Burchanowski, Bethlehem, PA (US);

Jeffrey Alan Reed, Hellertown, PA (US);

Ramin Khoini-Poorfard, Allentown, PA (US);

Assignee:

Lucent Technologies, Inc., Murray Hill, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 48 ; 324765 ;
Abstract

A circuit and method for detecting mobile ion contamination in a semiconductor device. The circuit uses two transistor structures on the same silicon chip as the circuit being tested to detect the presence (or absence) of mobile ions. The test includes imposing conditions on the silicon chip that may cause any mobile ions present therein to move within the structure. By measuring electrical parameters, such as a band gap voltage, across the transistors before and after the imposition of such conditions, a reliable indication of the presence or absence of mobile ions can be obtained.


Find Patent Forward Citations

Burchanowski, William. (1999). Circuit and method for predicting failure rates in a semiconductor device (U.S. Patent No. 5986281). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5986281

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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