The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 16, 1999
Filed:
Mar. 22, 1996
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
While a nitrogen-doped gallium phosphide epitaxial layer in an epitaxial wafer as a material of light-emitting diodes is desired to have a high concentration of nitrogen in order to enhance the efficiency of light emission, the present invention provides a reliable and efficient means to accomplish a high nitrogen concentration by the increase of the concentration of ammonia as a nitrogen source in the doping atmosphere to the contrary to the general understanding that increase of the ammonia concentration to exceed a limit rather has an effect of decreasing the concentration of nitrogen doped in the epitaxial layer. The inventive method is based on the discovery that an exponential relationship is held between the growth rate of the epitaxial layer and the concentration of nitrogen in the thus grown epitaxial layer.