The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
May. 30, 1997
Makoto Yoshida, Tokyo, JP;
Takahiro Kumauchi, Tokyo, JP;
Yoshitaka Tadaki, Hannou, JP;
Kazuhiko Kajigaya, Iruma, JP;
Hideo Aoki, Tokyo, JP;
Isamu Asano, Iruma, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
In a process for manufacturing a semiconductor integrated circuit device having a MISFET, in order that a shallow junction between the source/drain of the MISFET and a semiconductor substrate may be realized by reducing the number of heat treatment steps, all conductive films to be deposited on the semiconductor substrate are deposited at a temperature of 500.degree. C. or lower at a step after the MISFET has been formed. Moreover, all insulating films to be deposited over the semiconductor substrate are deposited at a temperature of 500.degree. C. or lower at a step after the MISFET has been formed.