The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 09, 1999
Filed:
Mar. 07, 1997
Applicant:
Inventor:
Susan C Abraham, San Jose, CA (US);
Assignee:
Lam Research Corp., Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
216 67 ; 216 72 ; 438710 ;
Abstract
In a plasma reactor, a method for removing photoresist mask defects, which includes introducing a substrate having thereon a photoresist mask into the plasma reactor. The method further includes flowing into the plasma reactor an etchant source gas comprising nitrogen. The etchant source gas is substantially oxidant-free. The method also includes removing the photoresist mask defects employing a plasma struck with the etchant source gas.