The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Jul. 09, 1998
Shuichi Ueno, Tokyo, JP;
Tomohiro Yamashita, Tokyo, JP;
Hidekazu Oda, Tokyo, JP;
Shigeki Komori, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A dummy cell part <31> includes a capacitor <311> having a first end which is connected to one of a plurality of pads <2> and a P-N junction element <312> having a first end which is connected to one of the plurality of pads <2> and a second end which is connected to one of the plurality of pads <2>. A sense part <32> is connected to a second end of the capacitor <311>, for sensing a potential on the second end of the capacitor <311> and outputting the result of sensing to one of the plurality of pads <2>. Thus, a memory cell evaluation semiconductor device which can evaluate a single memory cell, a method of fabricating the same and a memory cell evaluation method are obtained.