The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
Sep. 29, 1997
Dirk Tobben, Fishkill, NY (US);
Peter Weigand, Unterhaching, DE;
Siemens Aktiengesellschaft, Munich, DE;
Abstract
A method for forming a multi-level conductive structure on an integrated circuit. The method includes forming a first conductive layer 108 and forming a first dielectric layer 112 above the first conductive layer. The method further includes forming a second conductive layer 302 above the first dielectric layer. There is also included etching through the second conductive layer and at least partially into the first dielectric layer to form a trench 706 in the second conductive layer and the first dielectric layer, thereby removing at least a portion of the dielectric layer and forming a first conductive line 503 and a second conductive line 505 in the second conductive layer. Further, the method includes depositing a low capacitance material 908 into the trench. The low capacitance material represents a material having a dielectric constant lower than a dielectric constant of the first dielectric layer.