The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 02, 1999
Filed:
May. 08, 1998
Applicant:
Inventors:
Yuh-Lin Wang, Taipei, TW;
Lung-Wen Chen, Taichung Hsien, TW;
Assignee:
United Microelectronics Corp, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J / ;
U.S. Cl.
CPC ...
2504 / ; 250424 ; 2504 / ;
Abstract
An apparatus and a method of producing a dual ion/electron source. The ion beam and the electron beam are produced by a charged particle optical system. Using an ion source metal to emit an ion beam or an electron beam. The direction of the ion beam and the electron beam is identical. Neither the particle source nor the sample need to be rotated or shifted.
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Wang, Yuh-Lin. (1999). Apparatus and method of producing dual ion/electron source (U.S. Patent No. 5977549). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5977549
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile