The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
Jan. 07, 1999
Applicant:
Inventors:
Zhigiang (Jeff) Wu, Meridian, ID (US);
Randhir P Thakur, Boise, ID (US);
Alan Reinberg, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ;
U.S. Cl.
CPC ...
365149 ; 365174 ; 365175 ; 365177 ;
Abstract
The present invention is directed to a memory cell which comprises a storage node, a switching device for controlling access to the storage node, and a diode between the switching device and the storage node. A method for controlling charge transfer to and from a storage node through a switching device is also disclosed.
Quick Actions:
Wu, Zhigiang. (1999). Reduced leakage dram storage unit (U.S. Patent No. 5973954). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5973954
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