The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 26, 1999
Filed:
May. 15, 1998
Paul J Schuele, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A capacitor having a pair of conductive electrodes separated by a dielectric layer and wherein at least one of the electrodes comprise Ti.sub.x Al.sub.1-x N, and wherein the variable 'x' lies in a range of about 0.4 to about 0.8. The invention also contemplates a method for forming an electrically conductive diffusion barrier on a silicon substrate and which comprises providing a chemical vapor deposition reactor having a chamber; positioning the silicon substrate in the chemical vapor deposition reactor chamber; providing a source of gaseous titanium aluminum and nitrogen to the chemical vapor deposition reactor chamber; and providing temperature and pressure conditions in the chemical vapor deposition reactor chamber effective to deposit an electrically conductive diffusion barrier layer on the silicon substrate comprising Ti.sub.x Al.sub.1-x N, and wherein the variable 'x' is in a range of about 0.4 to about 0.8.