logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 5972724 B1

PDFFull Text
Date of Patent:
Oct. 26, 1999

Filed:

Sep. 12, 1995

Process for reducing the surface recombination speed in silicon

Applicant:
Inventors:

Wolfgang Arndt, Heilbronn, DE;

Klaus Graff, Heilbronn, DE;

Alfons Hamberger, Gundelsheim, DE;

Petra Heim, Heilbronn, DE;

Assignee:

Temic Telefunken microelectronic GmbH, Heilbronn, DE;

Attorneys:

Venable

Kunitz; Norman N.

Wells; Ashley J.

Primary Examiner:

Tuan H Nguyen

Assistant Examiner:

Matthew Whipple

Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438 14 ; 438 17 ; 438781 ; 438974 ; 427 10 ;
Abstract

The reduction of surface recombination is required for the manufacture of electronic devices made of silicon as well as for the application of various measurements and analytical methods for determining the purity of silicon. According to this invention, a process will be described for applying a laquer layer to the surface of silicon wafers, wherby the surface recombination velocity will be reduced to a value below 100 cm/s.

Find Patent Forward Citations

Arndt, Wolfgang. (1999). Process for reducing the surface recombination speed in silicon (U.S. Patent No. 5972724). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/5972724

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…